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B0520LWF Datasheet

Low VF SMD Schottky Barrier Diode

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B0520LWF pdf
Small Signal Product
B0520LWF,B0530WF,B0540WF
Taiwan Semiconductor
Low VF SMD Schottky Barrier Diode
FEATURES
- Surface device type mounting
- Moisture sensitivity level 1
- Packing code with suffix "G" means
green compound (halogen-free)
MECHANICAL DATA
- Case: Flat lead SOD-123 small outline plastic package
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed : 260°C/10s
- Polarity: Indicated by cathode band
- Weight: 8.85 ± 0.5 mg
SOD-123F
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
PARAMETER
SYMBOL B0520LWF B0530WF B0540WF
Repetitive Peak Reverse Voltage
Reverse Voltage
Mean Forward Current @ TL=100oC (Lead Temperature)
Non-Repetitive Peak Forward Surge Current (Note 1)
Thermal Resistance (Junction to Lead)
Thermal Resistance (Junction to Ambient) (Note 2)
VRRM
VR
IO
IFSM
RθJL
RθJA
20 30 40
20 30 40
500
5.5
150 118
340 206
Junction and Storage Temperature Range
TJ , TSTG
-65 to +125
-65 to +150
Notes: 1. Test Condition: 8.3ms single half sine-wave superimposed on rated load
Notes: 2. Valid provided that electrodes are kept at ambient temperature
UNIT
V
V
mA
A
oC/W
oC
Forward Voltage
Reverse Leakage Current
PARAMETER
IF= 0.1 A
IF= 0.5 A
IF= 1.0 A
IF= 0.1 A , Ta = 100oC
IF= 0.5 A , Ta = 100oC
IF= 1.0 A , Ta = 100oC
VR = 10V
VR = 20V
VR = 10V , Ta = 100oC
VR = 20V , Ta = 100oC
VR = 15V
VR = 30V
VR = 40V
VR = 40V , Ta = 100oC
SYMBOL
VF
IR
B0520LWF
0.300
0.385
-
0.220
0.330
-
75
250
5
8
-
-
-
-
B0530WF
0.375
0.500
-
-
-
-
-
-
-
-
20
130
-
-
B0540WF
-
0.510
0.620
-
0.460
0.610
-
10
-
5
-
-
20
13
UNIT
V
μA
mA
μA
mA
Document Number: DS_S1412005
Version: C14
Taiwan Semiconductor
Taiwan Semiconductor



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