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92T03GH Datasheet

AP92T03GH

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Advanced Power
Electronics Corp.
AP92T03GH/J
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Lower On-resistance
D
Fast Switching Characteristics
G
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP92T03GJ)
are available for low-profile applications.
BVDSS
RDS(ON)
ID
30V
4mΩ
75A
GD
S
TO-252(H)
GD
S
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
+20
75
50
300
89
0.71
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)4
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
1.4
62.5
110
Units
V
V
A
A
A
W
W/
Units
/W
/W
/W
Data and specifications subject to change without notice
1
200901123
http://www.Datasheet4U.com
Advanced Power Electronics
Advanced Power Electronics



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