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90T03GH Datasheet

AP90T03GH

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90T03GH pdf
Advanced Power
Electronics Corp.
AP90T03GH/J
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Lower On- resistance
Simple Drive Requirement
Fast Switching Characteristic
G
Description
D
S
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP90T03GJ) is available for low-profile applications.
BVDSS
RDS(ON)
ID
30V
4mΩ
75A
G D S TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
G
D
S
TO-251(J)
Rating
30
± 20
75
63
350
96
0.7
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Max.
Max.
Value
1.3
110
Unit
/W
/W
Data & specifications subject to change without notice
201211031
Advanced Power Electronics
Advanced Power Electronics



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