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9014C Datasheet

NPN Silicon Transistor

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UTC 9014
NPN EPITAXIAL SILICON TRANSISTOR
PRE-AMPLIFIER, LOW LEVEL &
LOW NOISE
FEATURES
*High total power dissipation. (450mW)
*Excellent hFE linearity.
*Complementary to UTC 9015
1
TO-92
1: EMITTER 2: BASE 3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
SYMBOL
RATING
Collector-base voltage
VCBO
50
Collector-emitter voltage
VCEO
45
Emitter-base voltage
VEBO
5
Collector current
Ic 100
Collector dissipation
Pc 450
Junction Temperature
Tj 150
Storage Temperature
TSTG
-55 ~ +150
UNIT
V
V
V
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-base breakdown voltage
BVCBO
Ic=100µA, IE=0
50
Collector-emitter breakdown voltage BVCEO
Ic=1mA, IB=0
45
Emitter-base breakdown voltage
BVEBO
IE=100µA, Ic=0
5
Collector cutoff current
ICBO
VCB=50V, IE=0
Emitter cutoff current
IEBO
VEB=5V, IC=0
DC current gain
hFE
VCE=5V,Ic=1mA
60
Collector-emitter saturation voltage VCE(sat)
Ic=100mA, IB=5mA
Base-emitter saturation voltage
VBE(sat)
Ic=100mA, IB=5mA
Base-emitter on voltage
VBE(on)
VCE=5V, Ic=2mA
0.58
Output Capacitance
Cob VCB=10V, IE=0, f=1MHz
Current gain-Bandwidth Porduct
fT
VCE=5V, Ic=10mA
150
Noise Figure
NF VCE=5V, Ic=0.2mA
f=1KHz, Rs=2K
TYP
280
0.14
0.84
0.63
2.2
270
0.9
MAX
50
100
1000
0.3
1.0
0.7
3.5
10
UNIT
V
V
V
nA
nA
V
V
V
pF
MHz
dB
UTC
UNISONIC TECHNOLOGIES CO., LTD. 1
QW-R201-031,A
UTC
UTC



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