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9014 Datasheet

NPN SILICON TRANSISTOR

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NPN SILICON TRANSISTOR
FEATURES
Power dissipation
PCM : 0.4
Collector current
W Tamb=25
ICM : 0.1
A
Collector-base voltage
V(BR)CBO : 50
V
TO 92
1.EMITTER
2.BASE
3.COLLECTOR
123
ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified
Parameter
Symbol
Test conditions
MIN TYP
Collector-base breakdown voltage V(BR)CBO
Collector-emitter breakdown voltage V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
Collector cut-off current
ICBO
Collector cut-off current
ICEO
Emitter cut-off current
IEBO
DC current gain(note)
HFE 1
Collector-emitter saturation voltage VCE(sat)
Base-emitter saturation voltage
VBE(sat)
Ic= 100 A IE=0
Ic= 0. 1 mA IB=0
IE= 100 A IC=0
VCB=50 V , IE=0
VCE=35 V , IB=0
VEB= 3 V IC=0
VCE= 5 V, IC= 1mA
IC= 100mA, IB= 5 mA
IC= 100 mA, IB= 5mA
50
45
5
60
Transition frequency
VCE= 5 V, IC= 10mA
fT 150
f =30MHz
MAX UNIT
V
V
V
0.1 A
0.1 A
0.1 A
1000
0.3 V
1V
MHz
CLASSIFICATION OF HFE(1)
Rank
A
Range
60-150
B
100-300
C
200-600
D
400-1000
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage: http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com
Wing Shing Computer Components
Wing Shing Computer Components



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