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8050SST Datasheet

NPN Plastic Encapsulated Transistor

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Elektronische Bauelemente
8050SST
1.5A , 40V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
General Purpose Switching and Amplification.
CLASSIFICATION OF hFE (1)
Product-Rank 8050SST-B 8050SST-C
Range
85~160
120~200
8050SST-D
160~300
TO-92
GH
J
AD
B
K
E CF
Emitter
Collector
Base
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
Collector


Base
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction to Ambient
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ, TSTG
40
25
5
1.5
1
125
150, -55~150

Emitter
Unit
V
V
V
A
W
°C / W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Base to Emitter Voltage
Transition Frequency
Collector Output Capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE (1)
hFE (2)
VCE(sat)
VBE(sat)
VBE
fT
Cob
Min
40
25
5
-
-
-
85
40
-
-
-
100
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
0.1
0.1
0.1
300
-
0.5
1.2
1
-
15
Unit
V
V
V
μA
μA
μA
V
V
V
MHz
pF
Test condition
IC=0.1mA, IE=0
IC=0.1mA, IB=0
IE=0.1mA, IC=0
VCB=40V, IE=0
VCE=20V, IB=0
VEB=5V, IC=0
VCE=1V, IC=100mA
VCE=1V, IC=800mA
IC=800mA, IB=80mA
IC=800mA, IB=80mA
VCE=1V, IC=10mA
VCE=10V, IC=50mA, f=30MHz
VCB=10V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
18-Feb-2011 Rev. B
Any changes of specification will not be informed individually.
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