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60T03GP Datasheet

AP60T03GP

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Advanced Power
Electronics Corp.
AP60T03GS/P
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Low Gate Charge
Fast Switching Speed
G
D
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP60T03GP)
are available for low-profile applications.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
BVDSS
RDS(ON)
ID
30V
12mΩ
45A
TO-263(S)
Rating
30
+20
45
32
120
44
0.352
-55 to 175
-55 to 175
TO-220(P)
Units
V
V
A
A
A
W
W/
Value
3.4
62
Units
/W
/W
Data and specifications subject to change without notice
1
200809253
Free Datasheet http://www.datasheet4u.com/
Advanced Power Electronics
Advanced Power Electronics



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