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60R900P Datasheet

MMD60R900P

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MMD60R900P Datasheet
MMD60R900P
600V 0.9N-channel MOSFET
Description
MMD60R900P is power MOSFET using magnachips advanced super junction technology that can
realize very low on-resistance and gate charge. It will provide much high efficiency by using
optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to
designers as well as low switching loss.
Key Parameters
Parameter
VDS @ Tj,max
RDS(on),max
VTH,typ
ID
Qg,typ
Value
650
0.9
3
4.5
12.3
Unit
V
V
A
nC
Package & Internal Circuit
D
G
DS
G
S
Features
Low Power Loss by High Speed Switching and Low On-Resistance
100% Avalanche Tested
Green Package Pb Free Plating, Halogen Free
Applications
PFC Power Supply Stages
Switching Applications
Adapter
Motor Control
DC DC Converters
Ordering Information
Order Code
Marking
MMD60R900PRH 60R900P
Temp. Range
-55 ~ 150
Package
TO-252
(DPAK)
Packing
Reel & Tube
RoHS Status
Halogen Free
Jul. 2013 Revision 1.0
1 MagnaChip Semiconductor Ltd.
MagnaChip
MagnaChip



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