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60R385CP Datasheet

IPD60R385CP

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60R385CP pdf
CoolMOS® Power Transistor
Features
• Worldwide best R ds,on in TO252
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
Product Summary
V DS @ Tj,max
R DS(on),max
Q g,typ
IPD60R385CP
650 V
0.385
17 nC
PG-TO252
CoolMOS CP is specially designed for:
• Hard switching SMPS topologies
Type
IPD60R385CP
Package
PG-TO252
Ordering Code
SP000307381
Marking
6R385P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
ID
I D,pulse
T C=25 °C
T C=100 °C
T C=25 °C
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
E AS
E AR
I AR
dv /dt
I D=3.4 A, V DD=50 V
I D=3.4 A, V DD=50 V
V DS=0...480 V
Gate source voltage
V GS static
AC (f >1 Hz)
Power dissipation
Operating and storage temperature
P tot T C=25 °C
T j, T stg
Value
9.0
5.7
27
227
0.3
3
50
±20
±30
83
-55 ... 150
www.DRateavS.he2e.t24U.net
page 1
Unit
A
mJ
A
V/ns
V
W
°C
2009-04-15
Infineon Technologies
Infineon Technologies



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