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GT60N321

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GT60N321
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60N321
High-Power Switching Applications
Fourth Generation IGBT
Unit: mm
FRD included between emitter and collector
Enhancement mode type
High speed IGBT : tf = 0.25 μs (typ.) (IC = 60 A)
FRD : trr = 0.8 μs (typ.) (di/dt = 20 A/μs)
Low saturation voltage: VCE (sat) = 2.3 V (typ.) (IC = 60 A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
symbol
Rating
Unit
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
DC
1 ms
Emitter-Collector
Forward Current
DC
1 ms
Collector Power Dissipation
(Tc = 25°C)
Junction Temperature
Storage Temperature
Screw Torque
VCES
VGES
IC
ICP
IECF
IECFP
PC
Tj
Tstg
1000
±25
60
120
15
120
170
150
55 to 150
0.8
V
V
A
A
W
°C
°C
Nm
JEDEC
JEITA
TOSHIBA
2-21F2C
Weight: 9.75 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Equivalent Circuit
Marking
Collector
Gate
Emitter
TOSHIBA
GT60N321
JAPAN
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1 2010-01-07
Toshiba Semiconductor
Toshiba Semiconductor



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