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60N100D Datasheet

FGL60N100D

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FGL60N100D
IGBT
General Description
Insulated Gate Bipolar Transistors (IGBTs) with trench gate
structure have superior performance in conduction and
switching to planar gate structure, and also have wide noise
immunity. These devices are well suitable for IH
applications
Features
• High Speed Switching
• Low Saturation Voltage : VCE(sat) = 2.5V @ IC = 60A
• High Input Impedance
• Built-in Fast Recovery Diode
Application
Home Appliance, Induction Heater, IH JAR, Micro Wave Oven
C
TO-264
GC E
www.DataSheet.co.kr
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
IF
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25°C
@ TC = 100°C
Diode Continuous Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 100°C
@ TC = 25°C
@ TC = 100°C
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(DIODE)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G
E
FGL60N100D
1000
± 25
60
42
120
15
176
70
-55 to +150
-55 to +150
300
Typ.
--
--
--
Max.
0.71
2.08
25
Units
V
V
A
A
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
FGL60N100D Rev. A
Datasheet pdf - http://www.DataSheet4U.net/
Fairchild Semiconductor
Fairchild Semiconductor



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