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60N06 Datasheet

N-Channel MOSFET Transistor

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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
60N06
·DESCRIPTION
·Drain Current ID= 60A@ TC=25
·Static Drain-Source On-Resistance
: RDS(on) = 18mΩ(Max)
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
·APPLICATIONS
·General purpose power amplifier
High current,high speed switching
Solenoid and relay drivers
ABSOLUTE MAXIMUM RATINGS(TC=25)
SYMBOL
ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
60 V
VGS
ID
ID(puls)
Gate-Source Voltage
Drain Current-continuous@ TC=25
Drain Current-continuous@ TC=100
Pulse Drain Current
±20
60
39
120
V
A
A
Ptot Total Dissipation@TC=25
120 W
Tj Max. Operating Junction Temperature 150
Tstg Storage Temperature Range
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
1.25 /W
Rth j-a Thermal Resistance, Junction to Ambient 62.5 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark
Inchange Semiconductor
Inchange Semiconductor



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