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60N03S Datasheet

AP60N03S

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Advanced Power
Electronics Corp.
AP60N03S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low On-Resistance
Fast Switching
Simple Drive Requirement
www.DataSheet4U.com
Description
GDS
TO-263
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP60N03P) is available for low-profile applications.
BVDSS
RDS(ON)
ID
30V
13.5mΩ
55A
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
± 20
55
35
215
62.5
0.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Max.
Max.
Value
2.0
62
Unit
/W
/W
Data & specifications subject to change without notice
200218032
Advanced Power Electronics
Advanced Power Electronics



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