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60N035 Datasheet

N-Channel Field Effect Transistor

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Bay Linear
Linear Excellence
N-Channel Field Effect Transistor
60N035
Advance Information
Description
The Bay Linear n-channel power field effect transistors are
produced using high cell density DMOS technology , These
devices are particularly suited for low voltage applications
such as automotive and other battery powered circuits where
fast switching, low in-line power loss and resistance to
transistors are needed.
The TO-220 is offered in a 3-pin is universally preferred for all
commercial-industrial applications at power dissipation level
to approximately to 50 watts. Also, available in a D2 surface
mount power package with a power dissipation up to 2 Watts
Features
Critical DC Electrical parameters
specified at elevated Temp.
Rugged internal source-drain diode
can eliminate the need for external
Zener diode transient suppresser
Super high density cell design for
extremely low RDS(ON)
VDSS = 30V
RDS (ON) = 0.015
ID = 60A
Ordering Information
Device
Package
60N035T
60N035S
TO-220
TO-263 ( D2 )
Temp.
0 to 150°C
0 to 150°C
Absolute Maximum Rating
Symbol
Parameter
ID
VDSS
VGSV
PD
TJ
TSTG
Drain Current
Continues
Pulsed
Drain-Source Voltage
Gate Source Voltage
Total Power Dissipation @ TC =25°C
Derate above 25°C
Operating and Storage
Temperature Range
Max
60
180
30
±20
50
0.4
-65 to 175
Unit
A
V
V
W
W/°C
°C
Bay Linear, Inc 2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 989-7144, Fax: (925) 940-9556
www.baylinear.com
ETC
ETC



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