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60N03 Datasheet

Power MOSFET

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60N03 pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
60N03
Power MOSFET
60 Amps,30Volts
N-Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain-to-Source Voltage
Gate-to-Source Voltage - Continuous
Drain Current - Continuous @ TA = 25°C
Drain Current - Single Pulse (tp = 10 ms)
Total Power Dissipation @ TA = 25°C
Operating and Storage
Temperature Range
VDSS
VGS
ID
IDM
PD
TJ, Tstg
30
±20
60*
120
75
- 55 to
150
Vdc
Vdc
Adc
Watts
°C
Single Pulse Drain-to-Source Avalanche
Energy - Starting TJ = 25°C
(VDD = 28 Vdc, VGS = 10 Vdc,
IL = 17 Apk, L = 5.0 mH, RG = 25 W)
Thermal Resistance
- Junction-to-Case
- Junction-to-Ambient (Note 1)
- Junction-to-Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8from case for 10 seconds
EAS
RqJC
RqJA
RqJA
TL
733 mJ
°C/W
1.65
67
120
260 °C
1. When surface mounted to an FR4 board using 1pad size,
(Cu Area 1.127 in2).
2. When surface mounted to an FR4 board using the minimum recommended
pad size, (Cu Area 0.412 in2).
*Chip current capability limited by package.
60 AMPERES
30 VOLTS
RDS(on) = 9.0 mW (Typ.)
N-Channel
D
G
12
3
4
4
S
1 23
1
Tuofeng Semiconductor
Tuofeng Semiconductor



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