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2SD882S Datasheet

NPN Silicon Epitaxial Planar Transistor

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2SD882S datasheet pdf
2SD882S
NPN Silicon Epitaxial Planar Transistor
for the output stage of 0.75 W audio, voltage
regulator, and relay driver.
The transistor is subdivided into three groups Q, P
and E, according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
Absolute Maximum Ratings (Ta = 25)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25
Parameter
DC Current Gain
at VCE = 2 V, IC = 1 A
Current Gain Group
at VCE = 2 V, IC = 20 mA
Collector Base Cutoff Current
at VCB = 30 V
Emitter Base Cutoff Current
at VEB = 3 V
Collector Base Breakdown Voltage
at IC = 100 µA
Collector Emitter Breakdown Voltage
at IC = 1 mA
Emitter Base Breakdown Voltage
at IE = 10 µA
Collector Emitter Saturation Voltage
at IC = 2 A, IB = 200 mA
Base Emitter Saturation Voltage
at IC = 2 A, IB = 200 mA
Transition Frequency
at VCE = 5 V, IC = 0.1 A, f = 100 MHz
Collector Output Capacitance
at VCB = 10 V, f = 1 MHz
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
Value
40
30
5
3
750
150
- 55 to + 150
Unit
V
V
V
A
mW
Symbol Min.
Q hFE
P hFE
E hFE
hFE
ICBO
IEBO
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCE(sat)
VBE(sat)
fT
Cob
100
160
200
30
-
-
40
30
5
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
90
45
Max.
200
320
400
-
1
1
-
-
-
0.5
2
-
-
Unit
-
-
-
-
µA
µA
V
V
V
V
V
MHz
pF
SEMTECH ELECTRONICS LTD.
®
Dated22/02/2016 CL Rev: 02
SEMTECH
SEMTECH



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