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2SD879 Datasheet

NPN EPITAXIAL PLANAR TRANSISTOR

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2SD879 pdf
DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
2SD879
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in 1.5V and 3V electronic flash.
Pinning
1 = Emitter
2 = Collector
3 = Base
Absolute Maximum Ratings(TA=25oC)
Characteristic
Symbol Rating
Collector-Base Voltage
VCBO
30
Collector-Emitter Voltage
VCEX
VCEO
20
10
Emitter-Base Voltage
VEBO
6
Collector Current (DC)
IC 3
Collector Current (pulse)
IC 5
Total Power Dissipation
PD 750
Junction Temperature
TJ +150
Storage Temperature
TSTG -55 to +150
Unit
V
V
V
V
A
A
mW
oC
oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70)
Min
2o Typ
2o Typ
(1.0.2570)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5oTyp. 5oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min Typ Max Unit
Test Conditions
Collector-Base Breakdown Volatge
BVCBO
30
-
-
V IC=10µA
BVCEX
20
-
- V IC=1mA,VBE=3V
Collector-Emitter Breakdown Voltage
BVCEO
10
-
- V IC=1mA
Emitter-Base Breakdown Volatge
BVEBO
6
-
- V IE=10µA
Collector Cutoff Current
ICBO
-
- 100 nA VCB=20V
Emitter Cutoff Current
Collector-Emitter Saturation Voltage(1)
DC Current Gain(1)
IEBO
VCE(sat)
hFE
-
-
140
- 100
0.3 0.4
210 400
nA VBE=4V
V IC=3A, IB=60mA
- IC=3A, VCE=2V
Transition Frequency
fT - 200 - MHz IC=50mA, VCE=10V
Output Capacitance
Cob - 30 - pF VCB=10V, f=1MHz
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Dc Components
Dc Components



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