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2SD602 Datasheet

NPN Transistor

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2SD602
TRANSISTOR (NPN)
SOT23
FEATURES
Low Collector to Emitter Saturation Voltage
Mini Type Package
MAXIMUM RATINGS (Ta=25unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
30
VCEO Collector-Emitter Voltage
25
VEBO Emitter-Base Voltage
5
IC Collector Current
500
PC Collector Power Dissipation
200
RΘJA Thermal Resistance From Junction To Ambient
625
Tj Junction Temperature
Tstg Storage Temperature
150
-55+150
Unit
V
V
V
mA
mW
/W
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=10µA, IE=0
Collector-emitter breakdown voltage
V(BR)CEO IC=10mA, IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=10µA, IC=0
Collector cut-off current
ICBO
VCB=20V, IE=0
Emitter cut-off current
IEBO VEB=5V, IC=0
DC current gain
hFE(1) *
hFE(2) *
VCE=10V, IC=0.15A
VCE=10V, IC=0.5A
Collector-emitter saturation voltage
VCE(sat)* IC=0.3A, IB=0.03A
Transition frequency
fT VCE=10V,IC=0.05A, f=200MHz
Collector output capacitance
Cob VCB=10V, IE=0, f=1MHz
*Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%.
CLASSIFICATION OF hFE(1)
RANK
RANGE
MARKING
Q
85170
WQ1
R
120240
WR1
Min Typ
30
25
5
85
40
200
Max
0.1
0.1
340
0.6
15
Unit
V
V
V
µA
µA
V
MHz
pF
S
170340
WS1
JinYu
semiconductor
www.htsemi.com
JinYu
JinYu



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