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2SD1513 Datasheet

NPN Transistor

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2SD1513 datasheet pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SD1513 TRANSISTOR (NPN)
FEATURES
z Low Collector Saturation
z High DC Current Gain
z Complementary to The 2SB1068 PNP Transistor
TO – 92
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
20
16
6
2
625
200
150
-55~+150
Unit
V
V
V
A
mW
/W
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)(1)
VCE(sat)(2)
VCE(sat)(3)
VBE (sat)
VBE
Cob
fT
Test conditions
IC= 0.1mA,IE=0
IC=1mA,IB=0
IE=0.1mA,IC=0
VCB=16V,IE=0
VEB=6V,IC=0
VCE=2V, IC=100mA
VCE=2V, IC=1.5A
IC=1A,IB=10mA
IC=1.5A,IB=20mA
IC=1.5A,IB=75mA
IC=1.5mA,IB=75mA
VCE=6V, IC=5mA
VCB=10V,IE=0, f=1MHz
VCE=10V,IC=50mA
Min Typ Max Unit
20 V
16 V
6V
0.1 μA
0.1 μA
135 650
100
0.4 V
0.5 V
0.5 V
1.2 V
0.55 0.65 V
28 pF
100 MHz
CLASSIFICATION OF hFE1
RANK
L
RANGE
135-270
K
200-400
U
300-650
A,Dec,2010
JCET
JCET



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