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2SC752GTM Datasheet

Silicon NPN Epitaxial Type Transistor

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2SC752GTM datasheet pdf
2SC752(G)TM
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC752(G)TM
Ultra High Speed Switching Applications
Computer, Counter Applications
Unit: mm
· High transition frequency: fT = 400 MHz (typ.)
· Low saturation voltage: VCE (sat) = 0.3 V (max)
· High speed switching time: tstg = 15 ns (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
40
15
5
200
40
400
125
-55~125
Unit
V
V
V
mA
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
VCB = 40 V, IE = 0
IEBO
VEB = 5 V, IC = 0
hFE (1)
VCE = 1 V, IC = 10 mA
(Note)
hFE (2)
VCE (sat)
VBE (sat)
fT
Cob
VCE = 1 V, IC = 100 mA
IC = 20 mA, IB = 1 mA
IC = 20 mA, IB = 1 mA
VCE = 10 V, IC = 10 mA
VCB = 10 V, IE = 0, f = 1 MHz
Turn-on time
ton
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
Min Typ. Max Unit
¾ ¾ 0.1 mA
¾ ¾ 0.1 mA
40 ¾ 240
20 ¾ ¾
¾ ¾ 0.3 V
¾ ¾ 1.0 V
200 400 ¾ MHz
¾4
6 pF
¾ 70 100
Switching time Storage time
tstg
¾ 15 30 ns
Fall time
tf
Duty cycle <= 2
Note: hFE classification R: 40~80, O: 70~140, Y: 120~240
1
¾ 30 70
2003-03-25
Toshiba Semiconductor
Toshiba Semiconductor



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