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2SC3355 Datasheet

NPN Transistor

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2SC3355 datasheet pdf
SHENZHEN HAOCHANG SEMICONDUCTOR CO.,LTD.
72 3ODVWLF(QFDSVXODWH 7UDQVLVWRUV
2SC3355
TRANSISTOR(NPN)
MAXIMUM RATINGS(Ta=25unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storag Temperature
Value
20
12
3
0.1
600
150
-55150
Units
V
V
V
A
mW
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS(Tamb=25unless otherwise specjfied):
Parameter
Symbol
Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
V(BR)CBO IC=100uA, IE=0
20
V
Collector-emittre breakdown’voltage V(BR)CEO IC=1mA, IB=0
12
V
Emitter-base breakdown voltage
V(BR)EBO IC=100uA, IC=0
3
V
Collector cut-off current
ICBO
VCB=10V, IE=0
0.1
Emitter cut-off current
IEBO
VEB=1VIC=0
0.1
DC current gain
HFE Vce=10VIc=20mA
50 120 300
Collector-emitter saturation voltage VCE(sat) IC=10mA,IB=1mA
0.5 V
Transition frequency
fT VCE=10V,IC=20mA
6.5 MHz
Noise Figure(1)
NF VCE=10V,IC=7mA,f=1GHZ
1.1
dB
Noise Figure(2)
NF VCE=10V,IC=40mA,f=1GHZ
1.8 3.0 dB
Collector output capacitance
Cob VCB=10V,IE=0,f=1MHz
0.65 1.0
pF
©2008 浩畅半导体
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