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2SC3279 Datasheet

NPN Silicon Epitaxial Planar Transistor

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2SC3279 NPN Silicon Epitaxial Planar Transistor
for storobo flash and medium power
amplifier applications.
The transistor is subdivided into four groups
L, M, N and P, according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (Ta=25oC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Pulsed(Note 1)
DC
Base Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Note 1: Pulse Width=10ms (Max.), Duty Cycle=30%(Max.)
Symbol
VCBO
VCES
VCEO
VEBO
ICP
IC
IB
Ptot
Tj
TS
Value
30
30
10
6
5
2
0.2
750
150
-55 to +150
Unit
V
V
V
A
A
A
mW
OC
OC
Page 1 of 3
7/15/2011
CHINA BASE
CHINA BASE



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