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2SC3279 Datasheet

NPN Transistor

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2SC3279 datasheet pdf
2SC3279(NPN)
TO-92 Bipolar Transistors
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
Features
High DC current gain and excellent hFE linearity
Low saturation voltage
MAXIMUM RATINGS (TA=25unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
30 V
VCEO
Collector-Emitter Voltage
10
V
VEBO
Emitter-Base Voltage
6V
IC Collector Current –Continuous 2
A
PC Collector Power Dissipation
750
mW
TJ Junction Temperature
150
Tstg Storage Temperature
-55-150
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol Test conditions
V(BR)CBO IC=1mA , IE=0
V(BR)CEO IC=10mA, IB=0
V(BR)EBO IE=1mA, IC=0
ICBO
VCB=30 V , IE=0
IEBO VEB=6 V , IC=0
hFE VCE=1V, IC=0.5A
VCE(sat) IC=2A, IB= 100mA
VBE IC= 2A, VCE=1V
f T VCE=1V, IC= 0.5A
Cob VCB=10V,IE=0,f=1MHz
MIN
30
10
6
140
TYP MAX UNIT
V
V
V
0.1 µA
0.1 µA
600
0.82 V
1.5 V
150 MHz
27 pF
CLASSIFICATION OF hFE
Rank
Range
L
140-240
M
200-330
N
300-450
P
420-600
LGE
LGE



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