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2SC2310 Datasheet

NPN Silicon Epitaxial Planar Transistor

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2SC2310
NPN Silicon Epitaxial Planar Transistor
low frequency, low noise amplifier.
The transistor is subdivided into two groups B and
C according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Emitter Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at VCE = 12 V, IC = 2 mA
Group
Current Gain
Collector Base Cutoff Current
at VCB = 18 V
Emitter Base Cutoff Current
at VEB = 2 V
Collector Base Breakdown Voltage
at IC = 10 µA
Collector Emitter Breakdown Voltage
at IC = 1 mA
Emitter Base Breakdown Voltage
at IC = 10 µA
Collector Emitter Saturation Voltage
at IC = 10 mA, IB = 1 mA
Base Emitter Voltage
at IC = 2 mA, VCE = 12 V
Transition Frequency
at VCE = 12 V, IC = 2 mA
Collector Output Capacitance
at VCB = 10 V, f = 1 MHz
Noise Figure
at VCE = 6 V, IC = 0.1 mA, f = 120 Hz, Rg = 500
Symbol
VCBO
VCEO
VEBO
IC
-IE
Ptot
Tj
Tstg
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package
Value
55
50
5
100
100
200
150
- 55 to + 150
Unit
V
V
V
mA
mA
mW
OC
OC
Symbol Min.
B hFE
C hFE
100
160
ICBO
IEBO
VCBO
VCEO
VEBO
VCE(sat)
VBE
fT
Cob
NF
-
-
55
50
5
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
0.67
230
1.8
3
Max.
200
320
Unit
-
-
0.5
0.5
-
-
-
0.2
0.75
-
3.5
5
µA
µA
V
V
V
V
V
MHz
pF
dB
Page 1 of 3
7/20/2012
CHINA BASE
CHINA BASE



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