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2SC2240 Datasheet

NPN Silicon Epitaxial Planar Transistor

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2SC2240
NPN Silicon Epitaxial Planar Transistor
for low noise audio amplifier applications.
The transistor is subdivided into two groups,
G and L according to its DC current gain
On special request, these transistors can be
manufactured in different pin configurations.
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
IB
Ptot
Tj
Tstg
Value
120
120
5
100
20
625
150
- 55 to + 150
Unit
V
V
V
mA
mA
mW
OC
OC
Characteristics at Ta = 25 OC
Parameter
Symbol
DC Current Gain
at VCE = 6 V, IC = 2 mA
Current Gain Group G
L
hFE
hFE
Collector Base Cutoff Current
at VCB = 120 V
ICBO
Emitter Base Cutoff Current
at VEB = 5 V
IEBO
Collector Emitter Breakdown Voltage
at IC = 1 mA
V(BR)CEO
Collector Emitter Saturation Voltage
at IC = 10 mA, IB = 1 mA
VCE(sat)
Transition Frequency
at VCE = 6 V, IC = 1 mA
fT
Output Capacitance
at VCB = 10 V, f = 1 MHz
Cob
Min.
200
350
-
-
120
-
-
-
Typ.
-
-
-
-
-
-
100
-
Max.
400
700
100
100
-
0.3
-
6
Unit
-
-
nA
nA
V
V
MHz
pF
SEMTECH ELECTRONICS LTD.
®
Dated08/01/2016 Rev02
SEMTECH
SEMTECH



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