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2SC2001-K Datasheet

NPN Silicon Plastic-Encapsulate Transistor

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2SC2001-K datasheet pdf
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

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Features
Capable of 0.6Watts of Power Dissipation.
Collector-current 0. 7A
Collector-base Voltage 30V
Operating and storage junction temperature range: -55OC to +150OC
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
x Marking: C2001
Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS
Compliant. See ordering information)
2SC2001-M
2SC2001-L
2SC2001-K
NPN Silicon
Plastic-Encapsulate
Transistor
TO-92
A
E
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min Max Units
OFF CHARACTERISTICS
V (BR)CEO
Collector-Emitter Breakdown Voltage
(I C=10mAdc, IB=0)
V(BR)CBO
Collector-Base Breakdown Voltage
(I C=100uAdc, IE=0)
V(BR)EBO
Emitter-Base Breakdown Voltage
(I E=100uAdc, IC=0)
ICBO Collector Cutoff Current
(VCB=30Vdc, IE=0)
ICEO Collector Cutoff Current
(VCE=20Vdc, IE=0)
IEBO Emitter Cutoff Current
(V EB=5.0Vdc, IC=0)
ON CHARACTERISTICS
25 --- Vdc
30 --- Vdc
5.0 --- Adc
--- 0.1 uAdc
---- 0.1 Vdc
--- 0.1 uAdc
hFE
V CE(sat)
V(BE)sat
fT
DC Current Gain
(I C=100mAdc, VCE=1.0Vdc)
Collector-Emitter Saturation Voltage
(I C=700mAdc, IB=70mAdc)
Base-Emitter Saturation Voltage
(I C=700mAdc, IB=70mAdc)
Transition Frequency
(VCE=6.0Vdc, IC=10mAdc, f=30MHz)
90 400 ---
--- 0.6 Vdc
--- 1.2 Vdc
50 --- MHz
CLASSIFICATION OF HFE
Rank
Range
M
90-180
L
135-270
K
200-400
B
C
D
EC
GB
DIMENSIONS
INCHES
MM
DIM MIN
MAX MIN MAX NOTE
A .170 .190 4.33 4.83
B .170 .190 4.30 4.83
C .550 .590 13.97 14.97
D .010 .020 0.36 0.56
E .130 .160 3.30 3.96
G .096 .104 2.44 2.64
Revision: A
www.mccsemi.com
1 of 2
2011/01/01
MCC
MCC



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