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2SC1923 Datasheet

NPN Silicon Epitaxial Planar Transistor

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2SC1923
NPN Silicon Epitaxial Planar Transistor
for high frequency amplifier applications
FM, RF, MIX, IF amplifier applications.
The transistor is subdivided into three groups, R,
O and Y, according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
IB
Ptot
Tj
Tstg
Value
40
20
4
20
4
100
150
- 55 to + 150
Unit
V
V
V
mA
mA
mW
OC
OC
Characteristics at Ta = 25 OC
Parameter
Symbol
DC Current Gain
at VCE = 6 V, IC = 1 mA
Collector Base Cutoff Current
at VCB = 18 V
Emitter Base Cutoff Current
at VEB = 4 V
Gain Bandwidth Product
at VCE = 6 V, IC = 1 mA
Reverse Transfer Capacitance
at VCE = 6 V, f = 1 MHz
Current Gain Group R
O
Y
hFE
hFE
hFE
ICBO
IEBO
fT
Cre
Min.
40
70
100
-
-
-
-
Typ.
-
-
-
-
-
550
0.7
Max.
80
140
200
500
500
-
-
Unit
-
-
-
nA
nA
MHz
pF
SEMTECH ELECTRONICS LTD.
®
Dated18/08/2016 Rev02
SEMTECH
SEMTECH



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