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2SB710 Datasheet

PNP Transistors

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2SB710 pdf
SMD Type
Transistors
PNP Transistors
2SB710
Features
Collector Current Capability IC=-0.5A
Collector Emitter Voltage VCEO=-25V
Complementary to 2SD602
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
12
0.95 +0.1
-0.1
1.9 +0.1
-0.1
Unit: mm
0.1 +0.05
-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
Tstg
Rating
-30
-25
-5
-0.5
-1
200
150
-55 to 150
Unit
V
A
mW
Electrical Characteristics Ta = 25
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μAIE=0
VCEO Ic= -10 mAIB=0
VEBO IE= -100μAIC=0
ICBO VCB= -20 V , IE=0
IEBO VEB= -5V , IC=0
VCE(sat) IC=-300mA, IB=-30mA
VBE(sat) IC=-300mA, IB=-30mA
VCE= -10V, IC= -150mA
hFE
VCE= -10V, IC= -500mA
Cob VCB= -10V,IE=0,f=1MHz
fT VCB= -10V,IE=50mA,f=200MHz
Classification of hfe(1)
Type
Range
85-340
Marking
C
2SB710-Q
85-170
CQ
2SB710-R
120-240
CR
2SB710-S
170-340
CS
Min Typ Max Unit
-30
-25 V
-5
-0.1
uA
-0.1
-0.6
V
-1.5
85 340
40
15 pF
200 MHz
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