Vertical DMOS FETs
►►Free from secondary breakdown
►►Low power drive requirement
►►Ease of paralleling
►►Low CISS and fast switching speeds
►►Excellent thermal stability
►►Integral source-drain diode
►►High input impedance and high gain
►►Power supply circuits
►►Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
The Supertex 2N7000 is an enhancement-mode (normally-
off) transistor that utilizes a vertical DMOS structure and
Supertex’s well-proven silicon-gate manufacturing process.
This combination produces a device with the power handling
capabilities of bipolar transistors, and the high input impedance
and positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free from
thermal runaway and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
Package Option Packing
2N7000-G P002 TO-92
2N7000-G P003 TO-92
2N7000-G P005 TO-92
2N7000-G P013 TO-92
2N7000-G PO14 TO-92
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
Absolute Maximum Ratings
Operating and storage temperature -55°C to +150°C
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
S i 2 N YY = Year Sealed
7 0 0 0 WW = Week Sealed
= “Green” Packaging
Package may or may not include the following marks: Si or
Typical Thermal Characteristics
* Mounted on FR4 board; 25mm x 25mm x 1.57mm