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2N5583 Datasheet

PNP Silicon High Frequency Transistor

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2N5583
PNP SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
The 2N5583 is Designed for
High Frequency Amplifier,
PACKAGE STYLE
and Non Saturated Switching
Applications.
MAXIMUM RATINGS
mIC 500 mA
oVCE -30 V
.cPDISS
1.0 W @ TA = 25 °C
5.0 W @ TC = 25 °C
UTJ -65 °C to +200 °C
t4TSTG
-65 °C to +200 °C
eθJC 350 °C/W
heCHARACTERISTICS TC = 25 °C
SSYMBOL
TEST CONDITIONS
BVCEO
IC = 10 mA
taBVCBO
IC = 10 µA
aBVEBO
IC = 100 µA
ICBO
VCB = -20 V
.DIEBO VEB = -2.0 V
VCE = -2.0 V IC = 40 mA
whFE IC = 100 mA
VCE = -5.0 V IC = 300 mA
wVCE(SAT)
IC = 100 mA IB = 10 mA
mVBE(ON)
w .cof
t
VCE = -2.0 V
VCE = -10 V
IC = 100 mA
IC = 40 mA
IC = 100 mA
f = 100 MHz
f = 100 MHz
t4UCcb VCB = -15 V
f = 100 KHz
eCeb VEB = -0.5 V
f = 100 KHz
herb'Cc VCB = -10 V IC = 50 mA f = 63.6 MHz
Std
tatr
atf
VCC = -31.4 V IC = 150 mA
RC = 160 RE = 26.6
MINIMUM
-30
-30
-3.0
20
25
15
1000
1300
NONE
TYPICAL MAXIMUM
50
500
100
-0.8
-1.8
5.0
35
8.2
1.2
2.2
2.0
UNITS
V
V
V
nA
nA
---
V
V
MHz
pF
pF
pS
nS
w.DA D V A N C E D S E M I C O N D U C T O R, I N C.
ww7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1202 FAX (818) 765-3004
REV. B
1/1
Specifications are subject to change without notice.
Advanced Semiconductor
Advanced Semiconductor



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