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2N5583 Datasheet

HIGH FREQUENCY TRANSISTOR

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2N5583 pdf
2N5583
JAN, JTX, JTXV AVAILABLE
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
HIGH FREQUENCY TRANSISTOR
PNP SILICON
fc
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
@Total Device Dissipation T/\ = 25°C
Derate above 25°C
@Total Device Dissipation Tc = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
vCEO
VCBO
v EBO
"C
PD
Pd
TJ< Tstg
Value
30
30
3.0
500
1.0
5.71
5.0
28.6
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
Watt
mW/°C
Watts
mW/°C
°C
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
dC = 10 mAdc, Ib = 0)
Collector-Base Breakdown Voltage
dC = 10 nAdc, Ie = 0)
Emitter-Base Breakdown Voltage
(IE = 100 ^Adc, \c = 0)
Collector Cutoff Current
(Vcb = 20 Vdc, = 0)
Emitter Cutoff Current
(Veb = 2.0 Vdc, lc = 0)
ON CHARACTERISTICS
DC Current Gaind)
dC = 40 mAdc, VC e = 2.0 Vdc)
dC = 100 mAdc, Vqe = 2.0 Vdc)
dC = 300 mAdc, Vqe = 5.0 Vdc)
Collector-Emitter Saturation VoltageO)
dC = 100 mAdc, Ib = 10 mAdc)
Base-Emitter On Voltaged)
dC = 100 mAdc, Vce = 2.0 Vdc)
SMALL SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product
dC = 40 mAdc, VC e = 10 Vdc, f = 100 MHz)
dC = 100 mAdc, Vce = 10 Vdc, f = 100 MHz)
Collector-Base Capacitance
(Vcb = 15 Vdc, El = 0, f = 100 kHz)
Emitter-Base Capacitance
(Veb = 0.5 Vdc, cl = 0, f = 100 kHz)
Collector Base Time Constant
dC = 50 mAdc, VC b = 10 Vdc, f = 63.6 MHz)
SWITCHING CHARACTERISTICS (FIGURE 10)
Turn-On Delay Time
Rise Time
Fall Time
<VCC = 31.4 Vdc, Cl = 150 mAdc,
RC - 160 Ohms, Re - 26.6 Ohms)
(1) Pulse Test: Pulse Width =s 300 /us. Duty Cycle as 2.0%.
Symbol
v(BR)CEO
v (BR)CBO
v (BR)EBO
ICBO
'EBO
30
30
3.0
hFE
v CE(sat)
v BE(on)
20
25
15
n
Ccb
Ceb
rb'C c
td
V
tf
1000
1300
-
Typ
40
40
22
0.6
0.84
1300
1500
2.5
18
8.0
1.0
2.1
1.8
Max
-
50
0.5
100
0.8
1.8
-
5.0
35
Vdc
Vdc
Vdc
nAdc
/xAdc
Vdc
Vdc
MHz
pF
PF
ps
ns
ns
ns
7-46
Motorola
Motorola



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