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2N5581 Datasheet

Silicon NPN Transistor

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2N5581 pdf
Description
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500 Appendix E
JAN level (2N5581J)
www.DataSheetJ4AU.NcoTmX level (2N5581JX)
JANTXV level (2N5581JV)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
2N5581
Silicon NPN Transistor
Data Sheet
Applications
General purpose switching
Low power
NPN silicon transistor
Features
Hermetically sealed TO-46 metal can
Also available in chip configuration
Chip geometry 0400
Reference document:
MIL-PRF-19500/423
Benefits
Qualification Levels: JAN, JANTX, and
JANTXV
Radiation testing available
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Collector Current, Continuous
Power Dissipation, TA = 25°C
Derate linearly above 25°C
Power Dissipation, TC = 25°C
Derate linearly above 25°C
Operating Junction Temperature
Storage Temperature
Symbol
VCEO
VCBO
IC
PT
PT
TJ
TSTG
TC = 25°C unless otherwise specified
Rating
Unit
50 Volts
75 Volts
800 mA
500
2.86
2
11.43
-55 to+200
mW
mW/°C
W
mW/°C
°C
-55 to+200
°C
Copyright2002
Rev. D
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.SEMICOA.com
Page 1 of 2
Semicoa Semiconductor
Semicoa Semiconductor



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