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2N3906 Datasheet
General Purpose Transistors
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2N3906
General Purpose
Transistors
PNP Silicon
Features
PbFree Packages are Available*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
40 Vdc
40 Vdc
5.0 Vdc
200 mAdc
625 mW
5.0 mW/°C
Total Power Dissipation @ TA = 60°C PD 250 mW
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5 W
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg 55 to +150
°C
THERMAL CHARACTERISTICS (Note 1)
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoAmbient RqJA 200 °C/W
Thermal Resistance, JunctiontoCase
RqJC
83.3
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates Data in addition to JEDEC Requirements.
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
TO92
CASE 29
STYLE 1
123
STRAIGHT LEAD
BULK PACK
12 3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
2N
3906
ALYWG
G
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
February, 2010 Rev. 4
1
Publication Order Number:
2N3906/D

2N3906 Datasheet PDF



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