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(Datasheet) 2N3903

NPN SILICON TRANSISTOR

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2N3903
2N3904
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3903 and
2N3904 types are NPN silicon transistors designed for
general purpose amplifier and switching applications.
PNP complementary types are 2N3905 and 2N3906.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
ΘJA
60
40
6.0
200
625
-65 to +150
200
UNITS
V
V
V
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C)
SYMBOL
TEST CONDITIONS
ICEV
VCE=30V, VEB=3.0V
BVCBO
IC=10μA
BVCEO
IC=1.0mA
BVEBO
IE=10μA
VCE(SAT)
IC=10mA, IB=1.0mA
VCE(SAT)
IC=50mA, IB=5.0mA
VBE(SAT)
IC=10mA, IB=1.0mA
VBE(SAT)
IC=50mA, IB=5.0mA
hFE VCE=1.0V, IC=0.1mA
hFE VCE=1.0V, IC=1.0mA
hFE VCE=1.0V, IC=10mA
hFE VCE=1.0V, IC=50mA
hFE VCE=1.0V, IC=100mA
hfe VCE=10V, IC=1.0mA, f=1.0kHz
fT VCE=20V, IC=10mA, f=100MHz
Cob VCB=5.0V, IE=0, f=100kHz
Cib VEB=0.5V, IC=0, f=100kHz
NF VCE=5.0V, IC=100μA, RS=1.0kΩ
f=10Hz to 15.7kHz
ton VCC=3.0V, VBE(OFF)=0.5V, IC=10mA
IB1=1.0mA
toff VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
2N3903
MIN MAX
- 50
60 -
40 -
6.0 -
- 0.2
- 0.3
0.65 0.85
- 0.95
20 -
35 -
50 150
30 -
15 -
50 200
250 -
- 4.0
- 8.0
- 6.0
- 70
- 225
2N3904
MIN MAX
- 50
60 -
40 -
6.0 -
- 0.2
- 0.3
0.65 0.85
- 0.95
40 -
70 -
100 300
60 -
30 -
100 400
300 -
- 4.0
- 8.0
UNITS
nA
V
V
V
V
V
V
V
MHz
pF
pF
- 5.0 dB
- 70 ns
- 250 ns
R2 (12-October 2011)
CENTRAL SEMICONDUCTOR
CENTRAL SEMICONDUCTOR


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