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2N3902 Datasheet

NPN HIGH POWER SILICON TRANSISTOR

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TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/371
Devices
2N3902
2N5157
Qualified Level
JAN
JANTX
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TA = +250C (1)
@ TC = +750C (2)
Operating & Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 29 mW/0C for TA > +250C
2) Derate linearly 0.8 W/0C for TC > +750C
Symbol
VCEO
VEBO
VCBO
IB
IC
PT
Tj, Tstg
Symbol
RθJC
ELECTRICAL CHARACTERISTICS
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Cutoff Current
VCE = 325 Vdc
2N3902
VCE = 400 Vdc
Collector-Emitter Cutoff Current
2N5157
VBE = 1.5 Vdc; VCE = 700 Vdc
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
2N3902
VEB = 6.0 Vdc
ON CHARACTERISTICS(3)
2N5157
Base-Emitter Saturation Voltage
IC = 1.0 Adc; IB = 0.1 Adc
IC = 3.5 Adc; IB = 0.7 Adc
Collector-Emitter Saturation Voltage
IC = 1.0 Adc; IB = 0.1 Adc
IC = 3.5 Adc; IB = 0.7 Adc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
2N3902 2N5157
400 500
5.0 6.0
700
2.0
3.5
5.0
100
-65 to +200
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W
0C
Max.
1.25
Unit
0C/W
TO-3 (TO-204AA)*
Symbol
*See Appendix A for Package
Outline
Min. Max.
Unit
ICEO 250 µAdc
250
ICEX 500 µAdc
IEBO 200 µAdc
200
VBE(sat)
VCE(sat)
1.5 Vdc
2.0
0.8 Vdc
2.5
120101
Page 1 of 2
Microsemi
Microsemi



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