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2N3902 Datasheet

Bipolar Transistor

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Bipolar Transistor
Description:
The 2N3902 is a silicon NPN transistor in a TO-3
type Package designed for use in high voltage
inverters, converters, switching regulators and
line Operated amplifiers.
NPN
Maximum Ratings:
Characteristic
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current -Continuous
Peak Base Current
Total Device Dissipation -(TC = +75°C),
Derate Above 95°C
Operating Junction Temperature Range
Storage Temperature Range,
Thermal Resistance, Junction-to-Case
Maximum Lead temperature
(During Soldering, 1/8" from case, 5sec)
Symbol
VCEX
VCEO(sus)
VEB
IC
IB
PD
TJ
Tstg
RthJC
TL
Rating
700
400
5
3.5
2
100
1.33
-65 to +150
-65 to +200
0.75
+275
Electrical Characteristics: (TC = +25°C Unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics (Note 2)
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
Emitter-Base Voltage
ON Characteristics (Note 2)
VCEO(SUS)
ICEO
IEBO
lC = 100mA, IB = 0
VCE= 400V, VBE = 0
IE = 100mA. lC= 5V
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Dynamic Characteristics
Current Gain-Bandwidth Product
hFE
VCE(sat)
VBE(sat)
fT
VCE = 5V, lC = 1A
lC = 2.5A, lB = 0.5A
VCE = 10V, lC = 200mA, f = 1MHz
Note:
1. Pulse Test : Pulse Width = 5ms, Duty Cycle 10%
2. Pulse Test : Pulse Width = 300µs, Duty Cycle 2%
Min
325
-
30
-
2.8
Unit
V
A
W
W/°C
 °C
°C/W
°C
Max Unit
-V
0.25
mA
5
90
2.5
V
2
- MHz
www.element14.com
www.farnell.com
www.newark.com
Page <1>
23/04/13 V1.0
Multicomp
Multicomp



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