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2N2222 Datasheet

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2N2222 pdf
2N2218-2N2219-2N2221-2N2222
THERMAL DATA
Rth j-cas e Thermal Resistance Junction-case
R th j-amb Thermal Resistance Junction-ambient
Max
Max
2N2218
2N2219
50 °C/W
187.5 °C/W
2N2221
2N2222
83.3 °C/W
300 °C/W
ELECTRICAL CHARACTERISTICS (T amb = 25 °C unless otherwise specified)
Symbol
ICBO
IEBO
V(BR) CBO
V(BR)CE O *
V(BR) EBO
V CE (s at )*
V B E (s at )*
hFE*
Parameter
Collector Cutoff Current
(IE = 0)
Emitter Cutoff Current
(IC = 0)
Colllector-base Breakdown
Voltage (IE = 0)
Collector-emitter Breakdown
Voltage (IB = 0)
Emittter-base Breakdown
Voltage (IC = 0)
Collector-emitter Saturation
Voltage
Base-emitter Saturation
Voltage
DC Current Gain
fT
C CBO
Transition Frequency
Collector-base Capacitance
Test Conditions
VCB = 50 V
VCB = 50 V
T amb = 150 °C
VEB = 3 V
IC = 10 µA
IC = 10 mA
IE = 10 µA
IC = 150 mA
IC = 500 mA
IB = 15 mA
IB = 50 mA
IC = 150 mA
IC = 500 mA
IB = 15 mA
IB = 50 mA
for 2N 221 8 and 2N 22 21
IC = 0.1 mA
IC = 1 mA
VCE = 10 V
VCE = 10 V
IC = 10 mA
IC = 150 mA
IC = 500 mA
IC = 150 mA
VCE = 10 V
VCE = 10 V
VCE = 10 V
VCE = 1 V
for 2N 221 9 and 2N 22 22
IC = 0.1 mA
IC = 1 mA
VCE = 10 V
VCE = 10 V
IC = 10 mA
VCE = 10 V
IC = 150 mA
IC = 500 mA
IC = 150 mA
VCE = 10 V
VCE = 10 V
VCE = 1 V
I C = 20 mA
f = 100 MHz
VCE = 20 V
IE = 0
f = 100 kHz
VCB = 10 V
Min.
60
30
5
20
25
35
40
20
20
35
50
75
100
30
50
250
Typ.
Re (h ie )
Real Part of Input
Impedance
IC = 20 mA
f = 300 MHz
* Pulsed : pulse duration = 300 µs, duty cycle = 1 %.
VCE = 20 V
Max.
10
10
10
0.4
1.6
1.3
2.6
120
300
8
60
Unit
nA
µA
nA
V
V
V
V
V
V
V
MHz
pF
2/5
STMicroelectronics
STMicroelectronics


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