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(Datasheet) 2N2222

Silicon NPN Power Transistor

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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·Collector Current- IC= 0.8A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 30V(Min)
·Complement to Type 2N2907
APPLICATIONS
·Designed for general-purpose switching and linear
amplification.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VCBO
Collector-Base Voltage
VCEO
VEBO
Collector-Emitter Voltage
Emitter-Base Voltage
IC Collector Current-Continuous
IBM Base Current-Peak
PC Collector Power Dissipation@TC=25
TJ Junction Temperature
Tstg Storage Temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a Thermal Resistance,Junction to Ambient
isc Product Specification
2N2222
VALUE
60
30
5
0.8
0.2
0.5
150
-65~150
UNIT
V
V
V
A
A
W
MAX
350
UNIT
K/W
isc Websitewww.iscsemi.cn
Inchange Semiconductor
Inchange Semiconductor


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