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2N2218 Datasheet

SILICON NPN TRANSISTOR

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2N2218
2N2218A
SILICON
NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2218 and
2N2218A are silicon NPN transistors manufactured by
the epitaxial planar process, and designed for small
signal general purpose and switching applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Power Dissipation
PD
Power Dissipation (TC=25°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
2N2218
60
2N2218A
75
30 40
5.0 6.0
800
800
3.0
-65 to +200
ELECTRICAL CHARACTERISTICS: (TA=25°C)
SYMBOL TEST CONDITIONS
ICBO
VCB=50V
ICBO
VCB=60V
ICEV
VCE=60V, VEB=3.0V
IEBO
VEB=3.0V
BVCBO
IC=10μA
BVCEO
IC=10mA
BVEBO
IE=10μA
VCE(SAT) IC=150mA, IB=15mA
VCE(SAT) IC=500mA, IB=50mA
VBE(SAT) IC=150mA, IB=15mA
VBE(SAT) IC=500mA, IB=50mA
hFE VCE=10V, IC=100μA
hFE VCE=10V, IC=1.0mA
hFE VCE=10V, IC=10mA
hFE VCE=10V, IC=150mA
hFE VCE=1.0V, IC=150mA
hFE VCE=10V, IC=500mA
hFE VCE=10V, IC=500mA
2N2218
MIN MAX
- 10
--
--
- 10
60 -
30 -
5.0 -
- 0.4
- 1.6
- 1.3
- 2.6
20 -
25 -
35 -
40 120
20 -
20 -
--
2N2218A
MIN MAX
--
- 10
- 10
- 10
75 -
40 -
6.0 -
- 0.3
- 1.0
- 1.2
- 2.0
20 -
25 -
35 -
40 120
20 -
--
25 -
UNITS
V
V
V
mA
mW
W
°C
UNITS
nA
nA
nA
nA
V
V
V
V
V
V
V
R1 (31-July 2013)
Central Semiconductor
Central Semiconductor



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