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1N4148 Datasheet

Silicon Switching Diode

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Silicon Switching Diode 1N4148
or
Applications
1N4148-1
DO-35 Glass Package
Used in general purpose applications,where a controlled forward
characteristic and fast switching speed are important.
Features
Six sigma quality
Metallurgically bonded
DO-35 Glass Package
Lea dDia .
0 .0 18-0 .0 22"
0 .458-0 .558m m
BKC's Sigma Bond™ plating
for problem free solderability
LL-34/35 MELF SMD available
Hermetic Glass Body
Available up to JANTXV-1 levels
1.0"
25.4 mm
(Min.)
Length
0.120-.200"
3.05-5.08- m m
Dia.
0.06-0.09"
1.53-2.28m m
"S" level screening available to Source Control Drawings-
i Maximum Ratings
Symbol
Value
Unit
Peak Inverse Voltage @ 5µA & 0.1µA @ -55oC
PIV
100 (Min).
Volts
Average Rectified Current
Iavg 200
mAmps
Continuous Forward Current
IFdc
Peak Surge Current (tpeak = 1 sec.)
Ipeak
BKC Power Dissipation TL=50 oC, L = 3/8" from body
Ptot
Operating Temperature Range
TOp
Storage Temperature Range
TSt
Electrical Characteristics @ 25 oC*
Symbol Minimum
300
1.0
500
-65 to +200
-65 to +200
Maximum
mAmps
Amp
mWatts
oC
oC
Unit
Forward Voltage Drop @ IF = 10 mA
VF
***
1.00 Volts
Breakdown Voltage @ IR = 5 µA
PIV 75
Volts
Breakdown Voltage @ IR = 100µA
PIV 100
Volts
Reverse Leakage Current @ VR = 75 V IR
5 (100 @ 150 oC) µA
Capacitance @ VR = 0 V, f = 1mHz
CT
4.0 pF
Reverse Recovery time (note 1)
trr
4.0 nSecs
Note 1: Per Method 4031-A with IF = 10 mA,Vr = 6 V, RL = 100 Ohms. * UNLESS OTHERWISE SPECIFIED
6 Lake Street - Lawrence, MA 01841
Tel: 978-681-0392 - Fax: 978-681-9135
Microsemi Corporation
Microsemi Corporation



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