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1N4001 Datasheet

(1N4001 - 1N4007) 1.0 Ampere DO-41 Package Silicon Diode

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1N4001 pdf
1N4001 thru 1N4007
®
1N4001 thru 1N4007
Pb Free Plating Product
1.0 Ampere DO-41 Package Silicon Diode
Features
Low forward voltage drop
High current capability
High surge current capability
DO-41
Pb
Unit: inch(mm)
.034(.86)
.028(.71)
Mechanical Data
Case: Molded plastic, DO-41
Epoxy: UL 94V-0 rate flame retardant
Lead: Axial leads, solderable per MIL-STD-202
method 208 guaranteed
Polarity: Color band denotes cathode end
Mounting position: Any
.107(2.7)
.080(2.0)
Absolute Maximum Ratings and Characteristics
Ratings at 25 OC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or
inductive load. For capacitive load, derate current by 20%.
Parameter
Symbols 1N4001
Maximum Recurrent Peak Reverse Voltage
VRRM
50
Maximum RMS Voltage
VRMS
35
Maximum DC Blocking Voltage
VDC 50
Maximum Average Forward Rectified Current
0.375" (9.5 mm) Lead Length at TA = 75 OC
I(AV)
Peak Forward Surge Current, 8.3 ms Single Half-
sine-wave Superimposed on rated load (JEDEC IFSM
method)
1N4002 1N4003 1N4004 1N4005 1N4006 1N4007
100 200 400 600 800 1000
70 140 280 420 560 700
100 200 400 600 800 1000
1
30
Units
V
V
V
A
A
Maximum Forward Voltage at 1 A DC and 25 OC
VF
1.1
V
Maximum Full Load Reverse Current, Full Cycle
Average at 75 OC Ambient
IR(AV)
30
µA
Maximum Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance 1)
TA = 25 OC
TA = 100 OC
Typical Thermal Resistance 2)
Operating Junction Temperature Range
IR
CJ
RθJA
TJ
5
500
15
50
-55 to +150
µA
pF
OC/W
OC
Storage Temperature Range
Tstg -55 to +150
1) Measured at 1 MHz and applied reverse voltage of 4 VDC.
2) Thermal resistance junction to ambient 0.375" (9.5 mm) lead length P.C.B mounted.
OC
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/
Thinki Semiconductor
Thinki Semiconductor



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