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1N4001 Datasheet

(1N4001 - 1N4007) Silicon Rectifier Diodes

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1N4001 - 1N4007
BY133
SILICON RECTIFIER DIODES
DO - 41
PRV : 50 - 1300 Volts
Io : 1.0 Ampere
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
MECHANICAL DATA :
0.107 (2.7)
0.080 (2.0)
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
0.205 (5.2)
0.166 (4.2)
1.00 (25.4)
MIN.
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
www.DataSheet4U.comMethod 208 guaranteed
Dimensions in inches and ( millimeters )
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.335 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 75 °C
Maximum Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 1.0 Amp.
Maximum DC Reverse Current
Ta = 25 °C
at rated DC Blocking Voltage Ta = 100 °C
Typical Reverse Recovery Time
(IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.)
Typical Junction Capacitance (Note1)
Typical Thermal Resistance (Note2)
Junction Temperature Range
Storage Temperature Range
SYMBOL 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 BY133 UNIT
VRRM 50 100 200 400 600 800 1000 1300 V
VRMS 35 70 140 280 420 560 700 1000 V
VDC 50 100 200 400 600 800 1000 1300 V
IF(AV) 1.0 A
IFSM
VF
IR
IR(H)
Trr
CJ
RθJA
TJ
TSTG
30
1.1
5.0
50
2.0
15
26
- 65 to + 175
- 65 to + 175
A
V
µA
µA
µs
pF
°C/W
°C
°C
Notes : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
Page 1 of 2
Rev. 05 : March 31, 2005
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