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1.5CE82A Datasheet

UNI-DIRECTIONAL AND BI-DIRECTIONAL SILICON TRANSIENT VOLTAGE SUPPRESSORS

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1.5CE6.8A THRU 1.5CE440A
1.5CE6.8CA THRU 1.5CE440CA
UNI-DIRECTIONAL
AND BI-DIRECTIONAL
SILICON TRANSIENT
VOLTAGE SUPPRESSORS
1500 WATTS, 6.8 THRU 440 VOLTS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 1.5CE6.8A (Uni-
Directional) and 1.5CE6.8CA (Bi-Directional) Series
types are Transient Voltage Suppressors designed to
protect voltage sensitive components from high voltage
transients.
THIS DEVICE IS MANUFACTURED WITH A GLASS
PASSIVATED CHIP FOR OPTIMUM RELIABILITY.
DO-201 CASE
Note: For Uni-Directional devices add suffix “A” to part
number. For Bi-Directional devices add suffix “CA” to
part number.
MARKING: FULL PART NUMBER
Bi-directional devices shall not be
marked with a Cathode band.
MAXIMUM RATINGS: (TL=25°C unless otherwise noted)
Peak Power Dissipation (Note 1)
Steady State Power Dissipation (TL=75°C, L.L.=3/8”)
Forward Surge Current (Uni-Directional only)
Operating and Storage Junction Temperature
SYMBOL
PPK
PD
IFSM
TJ, Tstg
1500
5.0
200
-65 to +175
UNITS
W
W
A
°C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
TYPE
BREAKDOWN
VOLTAGE
VBR @ IT
MIN NOM MAX
VVV
TEST
CURRENT
IT
WORKING
PEAK
REVERSE
VOLTAGE
VRWM
mA V
MAXIMUM
REVERSE
LEAKAGE
CURRENT
IR @ VRWM
µA
1.5CE6.8
6.45 6.8 7.14
10
5.8
1000
1.5CE7.5
7.13 7.5 7.88
10
6.4
500
1.5CE8.2
7.79 8.2 8.61
10
7.02
200
1.5CE9.1
8.65 9.1 9.55
1.0
7.78
50
1.5CE10
9.5 10 10.5 1.0
8.55
10
1.5CE11
10.5 11 11.6
1.0
9.4
5.0
1.5CE12
11.4 12 12.6
1.0
10.2
5.0
1.5CE13
12.4 13 13.7
1.0
11.1
5.0
1.5CE15
14.3 15 15.8
1.0
12.8
5.0
1.5CE16
15.2 16 16.8
1.0
13.6
5.0
1.5CE18
17.1 18 18.9
1.0
15.3
5.0
1.5CE20
19.0 20 21.0
1.0
17.1
5.0
1.5CE22
20.9 22 23.1
1.0
18.8
5.0
1.5CE24
22.8 24 25.2
1.0
20.5
5.0
1.5CE27
25.7 27 28.4
1.0
23.1
5.0
1.5CE30
28.5 30 31.5
1.0
25.6
5.0
1.5CE33
31.4 33 34.7
1.0
28.2
5.0
1.5CE36
34.2 36 37.8
1.0
30.8
5.0
1.5CE39
37.1
39
41
1.0
33.3
5.0
1.5CE43
40.9 43 45.2
1.0
36.8
5.0
Notes: (1) Non-repetitive 10x1,000µs pulse.
MAXIMUM
CLAMPING
VOLTAGE
VC @ IPP
V
10.5
11.3
12.1
13.4
14.5
15.6
16.7
18.2
21.2
22.5
25.2
27.7
30.6
33.2
37.5
41.4
45.7
49.9
53.9
59.3
PEAK
PULSE
CURRENT
(Note 1)
IPP
A
143
132
124
112
103
96
90
82
71
67
59.5
54
49
45
40
36
33
30
28
25.3
MAXIMUM
TEMPERATURE
COEFFICIENT
ΘVBR
% / °C
0.057
0.061
0.065
0.068
0.073
0.075
0.078
0.081
0.084
0.086
0.088
0.090
0.092
0.094
0.096
0.097
0.098
0.099
0.100
0.101
R1 (8-September 2011)
Central Semiconductor
Central Semiconductor



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